Subject Area
Electronics and Communication Engineering
Article Type
Original Study
Abstract
Large area polycrystalline, silicon substrates were prepared by the unidirectional solidification of metallurgical silicon on graphite. The silicon was firest purified by continuous heating with aqua-regia and then gettered with p < sub>2o5 at 1050 oC. Substrates had elongated silicon grains, up to several centimeters long. X-ray diffraction and spreading resistance measurements showed that the substrates were 0.03 0hm. Cm, n-type of (110) orientation- p – n junction solar cells were fabricated by chemical vapor deposition of a Ti/Ag layer through a metal mask. A thin film of Sno2 was used as an AR coating. The cell efficiency under AM1 conditions, open circuit voltage, short circuit current, and fill factor were measured to be 9.75 %, 568 mv, 23 mA/cm2, and 0.78, respectively, for a 30 cm2 cell with AR coating. Heat treatment in hydrogen at 900 oC was found to improve the cell efficiency by 15 – 20 % .
Recommended Citation
Abderrassoul, Roshdy
(2021)
"Large-Area Polycrystalline Silicon Substrates Using Unidirectionally Solidified Metallurgical-Grade Silicon for Solar Cell Applications.,"
Mansoura Engineering Journal: Vol. 14
:
Iss.
2
, Article 11.
Available at:
https://doi.org/10.21608/bfemu.2021.172283
