A Lumped Transient Thermal Model for Self-Heating in Mosfets.

Authors

Mohamed Sabry, Mechanical Power Engineering Department., Faculty of Engineering., El-Mansoura University.,Mansoura., Egypt.Follow
W. Fikry, Engineering Physics Math Department., Ain Shams University., (on leave to Mentor Graphics Egypt).
Kh. Abdel Salam, 10th of Ramadan Technological Institute., Egypt.
Mohamed Awad, Mechanical Power Engineering Department., Faculty of Engineering., El-Mansoura University.,Mansoura., Egypt.Follow
A. Nasser, 10 of Ramadan Technological Institute., Egypt.

Corresponding Author

Sabry, Mohamed

Subject Area

Mechanical Power Engineering

Article Type

Original Study

Abstract

Both static and dynamic effects related to self-heating in MOSFETs (Metal Oxyde-Silicon Field Effect Transistor) are studied in order to construct an adequate compact thermal model. An available 2D electrical device simulator in addition to a simple 2D finite difference code for the heat equation are used as analysis tools, These tools are used both to justify the proposed model topology as well as to extract model parameters. Both static and dynamic effects predicted by the model are compared with existing experimental results.

Recommended Citation

Sabry, Mohamed; Fikry, W.; Abdel Salam, Kh.; Awad, Mohamed; and Nasser, A. (2021) "A Lumped Transient Thermal Model for Self-Heating in Mosfets.," Mansoura Engineering Journal: Vol. 25 : Iss. 2 , Article 10.
Available at: https://doi.org/10.21608/bfemu.2021.158428