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Article Type

Original Study

Abstract

GaAs is currently one of these compound semiconductors' most preferred options for use in photodetector and photovoltaic applications as its increased mobility of electron and states density, in addition to its lower temperature coefficient when compared to silicon [Si]. Different metallic concerning wavelength of light and nanostructures geometry, subwavelength slit structures have plasmonic impacts and could develop a high light intensity region. All of frequencies within the spectrum of interior visible are absorbed inside the bonds, and as a result of their empty states of electron, they can move across the metal by electron transition. In this work, GaAs PIN photodetector with different nanoparticles (NPs) surface plasmon polariton [SPP] such as tungsten (W), palladium (Pd), mercury (Hg), rhodium (Rh), bismuth (Bi), copper (Cu), tin (Sn), gold (Au), and aluminum (Al) are studied, which improve the performance of PIN GaAs modelled photodetector. Internal quantum efficiency [IQE] with the Al SPP grating is 90.76%, whereas IQE of Au SPP grating is 85%, which demonstrated an enhancement of 5.76%. Furthermore, IQE of the proposed GaAs photodetector with no SPP grating is 42.00%, with a total improvement in IQE of 48.76% over the proposed Al SPP grating photodetector. Moreover, the distinctive enhancement in photocurrent and responsivity.

Keywords

Plasmonic photodetectors, GaAs photodetectors, SPP grating, Internal quantum efficiency

Creative Commons License

Creative Commons Attribution 4.0 License
This work is licensed under a Creative Commons Attribution 4.0 License.

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