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Corresponding Author

El-Awady, Rasheed

Subject Area

Electronics and Communication Engineering

Article Type

Original Study

Abstract

The practical utilization of photovoltaic effect in hybrid junction between P-Si substrates and n-(Znx-Cd1-x)S was observed. The performance of junctions prepared on hot substrates (Tab > 200oC) , and annealed in sulfur and air atmosphere for 20 minutes at temperature Ta> 350oC is given by 0o57 V for Voc, 15 MA/cm for Isc and 7 percent for conversion efficiency. A proper cleaning method to get rid oxygen contaminating the Si surface is necessary.

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